Patent · US Active

Magnetic random access memory devices including shared heating straps

US8611140B2 · kind B2 · utility

5Cited by
3References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2011
Grant dateDec 17, 2013
Priority date
Expiry dateSep 21, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B61/22
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes: (1) multiple magnetic random access memory (“MRAM”) cells each including a first end and a second end; (2) a bit line electrically coupled to the first end of at least one of the MRAM cells; and (3) a strap electrically coupled to the second end of each one of the MRAM cells. During a write operation, the bit line is configured to apply a first heating current, and the strap is configured to apply a second heating current, such that at least one of the MRAM cells is heated to at least a threshold temperature according to the first heating current and the second heating current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.