Magnetic random access memory devices including shared heating straps
US8611140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes: (1) multiple magnetic random access memory (“MRAM”) cells each including a first end and a second end; (2) a bit line electrically coupled to the first end of at least one of the MRAM cells; and (3) a strap electrically coupled to the second end of each one of the MRAM cells. During a write operation, the bit line is configured to apply a first heating current, and the strap is configured to apply a second heating current, such that at least one of the MRAM cells is heated to at least a threshold temperature according to the first heating current and the second heating current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.