Magnetic random access memory devices including heating straps
US8611141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Dec 26, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes at least one magnetic random access memory cell, which includes: (1) a magnetic tunnel junction having a first end and a second end; and (2) a strap electrically coupled to the second end of the magnetic tunnel junction. The memory device also includes a bit line electrically coupled to the first end of the magnetic tunnel junction. During a write operation, the bit line is configured to apply a first heating current through the magnetic tunnel junction, and the strap is configured to apply a second heating current through the strap, such that the magnetic tunnel junction is heated to at least a threshold temperature according to the first heating current and the second heating current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.