Methods of producing high-K dielectric films using cerium-based precursors
US8613975B2 · kind B2 · utility
5Cited by
21References
35Claims
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Key dates
| Filing date | May 22, 2009 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jan 8, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are provided to form and stabilize high-κ dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based β-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a β-diketonate; and x is 3 or 4. Further provided are methods of improving high-κ gate property of semiconductor devices by using cerium precursors according to Formula I. High-κ dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.