Image sensor and method of fabricating the same
US8614113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.