Integrated circuit device with well controlled surface proximity and method of manufacturing same
US8614132B2 · kind B2 · utility
6Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Sep 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.