Semiconductor light emitting device

US8614455B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Susumu Obata · Yokohama, JP
• Kazuhito Higuchi · Yokohama, JP
• Hideo Nishiuchi · Yokohama, JP
• Akiya Kimura · Yokohama, JP
• Toshiya Nakayama · Yokohama, JP
• Yoshiaki Sugizaki · Yokohama, JP
• Akihiro Kojima
• Yosuke Akimoto · Yokohama, JP

Key dates

• Filing date: Mar 20, 2012
• Grant date: Dec 24, 2013
• Expiry date: Mar 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8506

Abstract

According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.