Unit pixel of a CMOS image sensor
US8614470B2 · kind B2 · utility
3Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Jul 3, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.