Collections of laterally crystallized semiconductor islands for use in thin film transistors

US8614471B2 · kind B2 · utility

Assignee

• The Trustees of Columbia University in the City of New York · US

Inventors

• James S. Im · New York, US
• Ui-Jin Chung · New York, US

Key dates

• Filing date: Sep 22, 2008
• Grant date: Dec 24, 2013
• Expiry date: Nov 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/0227

Abstract

Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.