Semiconductor device and driving method thereof
US8614916B2 · kind B2 · utility
61Cited by
29References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2011 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a memory cell formed using a wide bandgap semiconductor, for example, an oxide semiconductor is provided. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. With the use of the wide bandgap semiconductor, an off-state current of a transistor included in the memory cell can be sufficiently reduced, and the semiconductor device which can hold data for a long period can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.