Method of manufacturing semiconductor optical device, method of manufacturing semiconductor optical laser element, and semiconductor optical device
US8615026B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 2010 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.