Optical device
US8615029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | May 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only in the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.