Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device

US8617936B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Babak H-Alikhani · Sarmenstorf, CH

Key dates

• Filing date: Jun 21, 2010
• Grant date: Dec 31, 2013
• Expiry date: Mar 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A method for manufacturing a reverse-conducting semiconductor device (RC-IGBT) with a seventh layer formed as a gate electrode and a first electrical contact on a emitter side and a second electrical contact on a collector side, which is opposite the emitter side, a wafer of a first conductivity type with a first side and a second side opposite the first side is provided. For the manufacturing of the RC-IGBT on the collector side, a first layer of the first conductivity type or of a second conductivity type is created on the second side. A mask with an opening is created on the first layer and those parts of the first layer, on which the opening of the mask is arranged, are removed. The remaining parts of the first layer form a third layer. Afterwards, for the manufacturing of a second layer of a different conductivity type than the third layer, ions are implanted into the wafer on the second side into those parts of the wafer, on which the at least one opening is arranged. Then the mask is removed and an annealing for the activation of the second layer is performed and a second electrical contact, which is in direct electrical contact to the second and third layer, is created on t…