Method for producing semiconductor optical device
US8617969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Jun 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.