Image sensor array for the back side illumination with junction gate photodiode pixels
US8618459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Mar 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.