Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
US8618543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Dec 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.