Photodetector optimized by metal texturing provided on the rear surface

US8618622B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Roch Espiau De Lamaestre · Grenoble, FR
• Salim Boutami · Grenoble, FR
• Olivier Gravrand · Saint-Égrève, FR
• Jérôme Le Perchec · Grenoble, FR

Key dates

• Filing date: Dec 13, 2011
• Grant date: Dec 31, 2013
• Expiry date: May 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/40

Abstract

Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.