Patent · US Active

Pattern structures in semiconductor devices

US8618679B2 · kind B2 · utility

8Cited by
4References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 25, 2010
Grant dateDec 31, 2013
Priority date
Expiry dateMay 6, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.