Crystal growth apparatus
US8623138B2 · kind B2 · utility
1Cited by
19References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2009 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/106
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.