Patent · US Active

Electronic sensor for nitric oxide

US8623281B2 · kind B2 · utility

2Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 10, 2009
Grant dateJan 7, 2014
Priority date
Expiry dateDec 22, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02A50/20
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.