Method of fabricating a nitride semiconductor light emitting device
US8623683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.