Reduction of stored charge in the base region of a bipolar transistor to improve switching speed
US8623749B2 · kind B2 · utility
0Cited by
12References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldBiotechnology
- WIPO sectorChemistry
Abstract
In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at least partially outside of the base mask. The method then forms an emitter region in a diffused base region. The base region diffuses outwardly to be formed under the contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.