Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
US8624215B2 · kind B2 · utility
5Cited by
84References
26Claims
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Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.