Nitride semiconductor device
US8624261B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nitride semiconductor device includes a first, a second, a third and a fourth transistor of n-type channel and a resistor. The first transistor has a first gate, a first source, and a first drain. The second transistor has a second gate, a second source electrically connected to the first gate, and a second drain. The third transistor has a third gate, a third source electrically connected to the first source, and a third drain electrically connected to the first gate and the second source. The fourth transistor has a fourth gate electrically connected to the third gate, a fourth source electrically connected to the first source and the third source, and a fourth drain electrically connected to the second gate. The resistor has one end electrically connected to the second drain and one other end electrically connected to the second gate and the fourth drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.