Diamond semiconductor device and method of manufacturing the same
US8624263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Mar 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the <111> direction while doping with impurities and burying the recessed portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.