Patent · US Active

Inducement of strain in a semiconductor layer

US8624319B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

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Inventors

Key dates

Filing dateJan 25, 2011
Grant dateJan 7, 2014
Priority date—
Expiry dateJan 25, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/822
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Strain is induced in a semiconductor layer. Embodiments include inducing strain by, for example, creation of free surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.