Semiconductor device having chip crack detection structure
US8624401B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 1, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jun 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor substrate, a first penetration electrode and a plurality of second penetration electrodes each penetrating the semiconductor substrate, a first terminal and a plurality of second terminals formed on a one side of the substrate, and a third terminal and a plurality of fourth terminals formed on an opposite side of the substrate. Each of the first and third terminals is vertically aligned with and electrically connected to first penetration electrode. Each of the second terminals is vertically aligned with an associated one of the second penetration electrodes and electrically connected to another one of the second penetration terminals that is not vertically aligned with the associated second terminal. Each of fourth terminals is vertically aligned with and electrically connected to an associated one of the second penetration electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.