Optical semiconductor device
US8625193B2 · kind B2 · utility
0Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jul 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3412
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is an optical semiconductor device including a lower clad layer 12 having a first conduction type, an active layer 14 that is provided on the lower clad layer 12 and has multiple quantum dot layers 51-55 having multiple quantum dots 41, and an upper clad layer 18 that is provided on the active layer 14 and has a second conduction type opposite to the first conduction type, the multiple quantum dot layers 51-55 having different quantum dot densities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.