Memory cells including resistance variable material patterns of different compositions
US8625325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2010 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Oct 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.