Method and apparatus for measuring isoelectric point using field effect transistor
US8628650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2008 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.