Methods to pattern diffusion layers in solar cells and solar cells made by such methods
US8628992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2009 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods exploiting a Self Aligned Cell (SAC) architecture for doping purposes, use the architecture to direct the deposition and application of either a dopant or a diffusion retarder. Doping is provided in regions that will become metallization for conducting fingers. Dopant may be treated directly into metallization grooves. Or, diffusion retarder may be provided in non-groove locations, and dopant may be provided over some or all of the entire wafer surface. Dopant and metal automatically go where desired, and in register with each other. The SAC architecture also includes concave surfaces for light absorbing regions of a cell, to reduce reflection of light energy, which regions may also be treated with dopant in the concavities, to result in semi-conductor emitter lines. Alternatively, diffusion retarder may be treated into the concavities, leaving upper tips of ridges between the concavities exposed, thereby subject to deeper doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.