Carbon nanotube transistor employing embedded electrodes

US8629010B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• KARLSRUHER INSTITUT FÜR TECHNOLOGIE · DE

Inventors

• Phaedon Avouris · Yorktown Heights, US
• Yu-Ming Lin · Hsinchu, TW
• Mathias B. Steiner · Rio de Janeiro, BR
• Michael Engel · Karlsruhe, DE
• Ralph Krupke · Blankenloch, DE

Key dates

• Filing date: Oct 21, 2011
• Grant date: Jan 14, 2014
• Expiry date: Dec 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/466
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.