Semiconductor device and method of fabricating the same
US8629020B2 · kind B2 · utility
4Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.