Uncooled infrared imaging element and manufacturing method thereof

US8629396B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Masako Ogata · Tokyo, JP
• Ikuo Fujiwara · Yokohama, JP
• Hiroto Honda · Tokyo, JP
• Kazuhiro Suzuki · Kawasaki, JP
• Honam Kwon · Ota, JP
• Risako Ueno · Tokyo, JP
• Hitoshi Yagi · Yokohama, JP
• Masaki Atsuta · Yokosuka, JP
• Koichi Ishii · Kawasaki, JP
• Keita Sasaki · Yokohama, JP
• Hideyuki Funaki · Tokyo, JP

Key dates

• Filing date: Sep 18, 2011
• Grant date: Jan 14, 2014
• Expiry date: Sep 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/026

Abstract

An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.