Contamination inspection
US8629407B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.