Non-volatile memory device having reference cells, and related method of setting reference current
US8630140B2 · kind B2 · utility
1Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of setting a reference current of a nonvolatile memory device comprises measuring a noise characteristic of each of multiple reference cells, and selecting at least one of the reference cells as a reference cell for generating a reference current according to the measured noise characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.