Patent · US Active

Sensor device, motion sensor, and electronic device

US8631701B2 · kind B2 · utility

4Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2011
Grant dateJan 21, 2014
Priority date
Expiry dateApr 24, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/48091
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensor device includes a first electrode disposed on active surface side of a silicon substrate, an external connecting terminal electrically connected to the first electrode, at least one stress relaxation layer disposed between the silicon substrate and the external connecting terminal, a connecting terminal disposed on the active surface side of the silicon substrate, and a vibration gyro element having weight sections as mass adjustment sections, the vibration gyro element is held by the silicon substrate due to connection between the connection electrode and the external connecting terminal, and a meltage protection layer formed in an area where the stress relaxation layer and the mass adjustment section overlap each other in a plan view is provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.