Method of forming an I-II-VI2 compound semiconductor thin film of chalcopyrite structure
US8632851B1 · kind B1 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Apr 26, 2013 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.