Structures and methods for reducing junction leakage in semiconductor devices
US8633513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2008 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
Structures and method for reducing junction leakage in semiconductor devices. The die can include a substrate having a cut edge, a first region of first conductivity type within the substrate and a region of a second conductivity type within the substrate and in contact with the first region forming a junction. At least one semiconductor device is on the substrate. A second region of the first conductivity type is between the plurality of semiconductor devices and the cut edge within the region of the second conductivity type, and extending to the junction. The second region of the first conductivity type can isolate the at least one semiconductor device from leakage pathways created by saw damage at the junction along the cut edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.