Gallium nitride power devices
US8633518B2 · kind B2 · utility
43Cited by
32References
21Claims
0Family size
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Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
Abstract
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.