Electro-static discharge protection circuit and semiconductor device

US8633543B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventors

• Kazutoshi Ohta · Inazawa, JP
• Kenji Hashimoto · Kodaira, JP

Key dates

• Filing date: Mar 2, 2011
• Grant date: Jan 21, 2014
• Expiry date: Mar 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

An electro-static discharge protection circuit includes: a PNPN junction, a P-type side of the PNPN junction being coupled to a terminal, an N-type side of the PNPN junction being coupled to ground; and a P-type metal oxide semiconductor transistor, a source and a gate of the P-type metal oxide semiconductor transistor being coupled to an N-type side of a PN junction whose P-type side coupled to the ground, and a drain of the P-type metal oxide semiconductor transistor being coupled to the terminal.