Patent · US Active

Semiconductor apparatus

US8633723B2 · kind B2 · utility

4Cited by
1References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 10, 2011
Grant dateJan 21, 2014
Priority date
Expiry dateJan 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/83
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the sensing MOSFET's are formed on a semiconductor substrate, and a sensing MOSFET is selected for changing the sensing ratio and further for confining the sensing ratio variations within a certain narrow range stably from a low main current range to a high main current range. A semiconductor apparatus according to aspects of the invention facilitates reducing the manufacturing costs thereof, obviating the cumbersomeness caused in the use thereof, and confining the sensing ratio variations within a certain narrow range stably.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.