Driving method of semiconductor device
US8634228B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2011 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/403
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A driving method of a semiconductor device is provided. In a semiconductor device including a bit line, a selection line, a selection transistor, m (m is a natural number greater than or equal to 2) writing word lines, m reading word lines, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor. The second transistor includes a channel formed in an oxide semiconductor layer. In a driving method of a semiconductor device having the above structure, when writing to a memory cell is performed, the first transistor is turned on so that a first source terminal or a first drain terminal is set to a fixed potential; thus, a potential is stably written to the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.