Phase change memory device, storage system having the same and fabricating method thereof
US8634236B2 · kind B2 · utility
9Cited by
1References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 16, 2011 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.