Methods and apparatus for programming multiple program values per signal level in flash memories
US8634250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2009 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for programming multiple program values per signal level in flash memories. A flash memory device having a plurality of program values is programmed by programming the flash memory device for a given signal level, wherein the programming step comprises a programming phase and a plurality of verify phases. In another variation, a flash memory device having a plurality of program values is programmed, and the programming step comprises a programming phase and a plurality of verify phases, wherein at least one signal level comprises a plurality of the program values. The signal levels or the program values (or both) can be represented using one or more of a voltage, a current and a resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.