Patent · US Active

High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution

US8637334B2 · kind B2 · utility

9Cited by

5References

22Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Daniel Bryce Thompson · Walnut Creek, US
Jacob J. Richardson · Lompoc, US
Ingrid Koslow · Regensburg, DE
Jun Seok Ha · Seoul, KR
Frederick F. Lange · Lompoc, US
Steven P. DenBaars · Goleta, US
Shuji Nakamura · Goleta, US

Key dates

Filing date	Nov 3, 2010
Grant date	Jan 28, 2014
Priority date	—
Expiry date	Sep 17, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/832
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.