Etching composition, method of forming a metal pattern and method of manufacturing a display substrate
US8637399B2 · kind B2 · utility
1Cited by
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15Claims
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Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.