Single junction type cigs thin film solar cell and method for manufacturing the thin film solar cell
US8637765B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Aug 11, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.