Semiconductor device and fabrication method thereof
US8637905B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 18, 2010 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Aug 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The invention relates to a semiconductor device and a fabrication method thereof. A semiconductor device according to an aspect of the invention comprising: a semiconductor layer on a substrate; an isolation layer on the semiconductor layer; a source and a drain which are in contact with the semiconductor layer, each of the source and the drain comprises multiple fingers, and the multiple fingers of the source intersect the multiple fingers of the drain; and a gate on the isolation layer, the gate is located between the source and the drain and comprises a closed ring structure which encircles the multiple fingers of the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.