Image sensor
US8637910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2010 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | May 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1825
Abstract
An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.