Multi-axis integrated MEMS devices with CMOS circuits and method therefor
US8637943B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 2, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jun 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.